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技术资料 Data
MTP10N40的技术资料
来源:汕头市创世纪电子发展有限公司; (2009/4/16 15:50:25)
MTP10N40的产品特征：
• Avalanche Energy Capability Specified at Elevated Temperature
• Low Stored Gate Charge for Efficient Switching
• Internal Source–to–Drain Diode Designed to Replace External Zener Transient Suppressor — Absorbs High Energy in the Avalanche Mode
• Source–to–Drain Diode Recovery Time Comparable to Discrete Fast Recovery Diode
以上信息由『维库电子开发网』（www.weeqoo.com）整理。
MTP10N40的技术参数：
资料整理：维库电子开发网（www.weeqoo.com），的芯片PDF资料基地。
MTP10N40的产品描述：
• Avalanche Energy Capability Specified at Elevated Temperature
• Low Stored Gate Charge for Efficient Switching
• Internal Source–to–Drain Diode Designed to Replace External Zener Transient Suppressor — Absorbs High Energy in the Avalanche Mode
• Source–to–Drain Diode Recovery Time Comparable to Discrete Fast Recovery Diode
以上信息由『维库电子开发网』（www.weeqoo.com）整理。
MTP10N40的技术参数：
|
Rating |
Symbol |
Value |
Unit |
| Drain–to–Source Voltage |
VDSS |
400 |
Vdc |
| Drain–to–Gate Voltage (RGS = 1.0 MΩ) |
VDGR |
400 |
Vdc |
| Gate–to–Source Voltage — Continuous — Non–repetitive |
VGS VGSM |
±20 ±40 |
Vdc Vpk |
| Drain Current — Continuous — Pulsed |
ID IDM |
10 40 |
Adc |
| Total Power Dissipation Derate above 25°C |
PD |
125 1.0 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
–65 to 150 |
°C |
资料整理：维库电子开发网（www.weeqoo.com），的芯片PDF资料基地。
MTP10N40的产品描述：
This advanced high voltage TMOS E–FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a drain–to–source diode with fast recovery time. Designed for high voltage, high speed switching applications such as power supplies, PWM motor controls and other inductive loads, the avalanche energy capability is specified to eliminate the guesswork in designs where inductive loads are switched and offer additional safety margin against unexpected voltage transients.
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