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技术资料 Data
MTP12N06的技术资料
来源:汕头市创世纪电子发展有限公司; (2009/4/16 15:50:25)
MTP12N06的产品特征：
• ESD Protected
• 4 kV Human Body Model
• 400 V Machine Model
• Avalanche Energy Capability
• Internal Source–To–Drain Diode Designed to Replace External Zener Transient Suppressor–Absorbs High Energy in the Avalanche Mode
以上信息由『维库电子开发网』（www.weeqoo.com）整理。
MTP12N06的技术参数：
Designer’s Data for “Worst Case” Conditions — The Designer’s Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
资料整理：维库电子开发网（www.weeqoo.com），的芯片PDF资料基地。
MTP12N06的产品描述：
This advanced TMOS power FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a gate–to–source zener diode designed for 4 kV ESD protection (human body model).
• ESD Protected
• 4 kV Human Body Model
• 400 V Machine Model
• Avalanche Energy Capability
• Internal Source–To–Drain Diode Designed to Replace External Zener Transient Suppressor–Absorbs High Energy in the Avalanche Mode
以上信息由『维库电子开发网』（www.weeqoo.com）整理。
MTP12N06的技术参数：
|
Rating |
Symbol |
Value |
Unit |
| Drain–to–Source Voltage |
VDSS |
60 |
Vdc |
| Drain–to–Gate Voltage (RGS =1.0 MΩ) |
VDGR |
60 |
Vdc |
| Gate–to–Source Voltage — Continuous — Non–Repetitive (tp ≤10 ms) |
VGS VGSM |
±15 ±20 |
Vdc VPK |
| Drain Current — Continuous — Continuous@ 100°C — Single Pulse (tp ≤ 10 μs) |
ID ID IDM |
12 7.1 36 |
Adc Apk |
| Total Power Dissipation @ TC = 25°C Derate above 25°C |
PD |
45 0.36 |
Watts W/°C |
| Operating and Storage Temperature Range |
TJ, Tstg |
–55 to 150 |
°C |
| Single Pulse Drain–to–Source Avalanche Energy TJ = 25°C (VDD =25 Vdc, VGS =5.0Vdc IL =12 Apk L =1.0mH, RG = 25Ω |
EAS |
72 |
mJ |
| Thermal Resistance — Junction to Case — Junction to Ambient |
RθJC RθJA |
2.78 62.5 |
°C/W |
| Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds |
TL |
260 |
°C |
curves — representing boundaries on device characteristics — are given to facilitate “worst case” design.
E–FET and Designer’s are trademarks of Motorola, Inc. TMOS is a registered trademark of Motorola, Inc.
资料整理：维库电子开发网（www.weeqoo.com），的芯片PDF资料基地。
MTP12N06的产品描述：
This advanced TMOS power FET is designed to withstand high energy in the avalanche mode and switch efficiently. This new high energy device also offers a gate–to–source zener diode designed for 4 kV ESD protection (human body model).
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