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技术资料 Data

MTP1306的技术资料

来源:汕头市创世纪电子发展有限公司; (2009/4/16 15:50:25)

MTP1306的产品特征：
• Avalanche Energy Specified
• Source–to–Drain Diode Recovery Time Comparable to a Discrete Fast Recovery Diode
• Diode is Characterized for Use in Bridge Circuits
• I_DSS and V_DS(on) Specified at Elevated Temperature

以上信息由『维库电子开发网』（www.weeqoo.com）整理。

MTP1306的技术参数：

Rating	Symbol	Value	Unit
Drain–to–Source Voltage	V_DSS	300	Vdc
Drain–to–Gate Voltage (R_GS = 1.0 MΩ)	V_DGR	300	Vdc
Gate–to–Source Voltage — Continuous — Non–Repetitive (t_p ≤10 ms)	V_GS VGSM	± 20 ± 20	Vdc Vpk
Drain Current — Continuous — Continuous @ @TC=100°C — Single Pulse (t_p ≤ 10 μs)	I_D I_D I_DM	75 59 225	Adc Apk
Total Power Dissipation Derate above 25°C	P_D	150 1.2	Watts W/°C
Operating and Storage Temperature Range	T_J, T_stg	–55 to 175	°C
Single Pulse Drain–to–Source Avalanche Energy T_J = 25°C (V_DD =25Vdc,V_GS = 10Vdc, Vdc,Peak I_L =75Apk, L = 0.1mH, R_G = 25Ω)	E_AS	280	mJ
Thermal Resistance — Junction to Case — Junction to Ambient	R_θJC R_θJA	0.8 62.5	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8"from Case for 10 seconds	T_L	260	°C

This document contains information on a new product. Specifications and information herein are subject to change without notice.
E–FET and HDTMOS are trademarks of Motorola, Inc.

资料整理：维库电子开发网（www.weeqoo.com），的芯片PDF资料基地。

MTP1306的产品描述：
This advanced high–cell density HDTMOS power FET is designed to withstand high energy in the avalanche and commutation modes. This new energy efficient design also offers a drain–to–source diode with a fast recovery time. Designed for low voltage, high speed switching applications in power supplies, converters and PWM motor controls, these devices are particularly well suited for bridge circuits where diode speed and commutating safe operating area are critical and offer additional safety margin against unexpected voltage transients.

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